Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On‐Chip Light Sources

Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on-chip light sources. Tremendous improvements in device performance and reliability have been demonstrated devices grown on planar substrates last few years. Recently, electrically pumped QD lasers deposited narrow oxide pockets a butt-coupled configuration coupling realized patterned wafers. However, yield reliability, which ultimately determines scalability of such technology, are limited by material uniformity. Here, detailed analysis performed, both experimentally theoretically, asymmetry induced pocket geometry provides unambiguous evidence suggesting that all should be aligned to [1 1 ¯ 0 $\bar{1}\ 0$ ] direction III-V crystal high yield, performance, scalable sources at 300 mm scale.